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? semiconductor components industries, llc, 2014 december, 2014 ? rev. 9 1 publication order number: amis?30600/d amis-30600 lin transceiver general description the single?wire transceiver amis?30600 is a monolithic integrated circuit in a soic?8 package. it works as an interface between the protocol controller and the physical bus. the amis?30600 is especially suitable to drive the bus line in lin systems in automotive and industrial applications. further it can be used in standard iso9141 systems. in order to reduce the current consumption the amis?30600 offers a stand?by mode. a wake?up caused by a message on the bus pulls the inh?output high until the device is switched to normal operation mode. the transceiver is implemented in i2t100 technology enabling both high?voltage analog circuitry and digital functionality to co?exist on the same chip. the amis?30600 provides an ultra?safe solution to today?s automotive in?vehicle networking (ivn) requirements by providing unlimited short circuit protection in the event of a fault condition. features ? lin?bus t ransceiver ? lin compliant to specification rev. 1.3 and rev. 2.0 ? i2t high?voltage technology ? bus voltage 40 v ? transmission rate up to 20kbaud ? soic?150?8 package ? protection ? thermal shutdown ? indefinite short circuit protection to supply and ground ? load dump protection (45 v) ? power saving ? operating voltage = 4.75 to 5.25 v ? power down supply current < 50 a ? ems compatibility ? integrated filter and hysteresis for receiver ? emi compatibility ? integrated slope control for transmitter ? slope control dependant from vbat to enable maximum capacitive load ? these are pb?free devices *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com pin assignment (top view) 5 6 7 8 1 2 3 4 rxd txd inh en lin amis? 30600 see detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. ordering information v cc v bb gnd
amis?30600 http://onsemi.com 2 lin amis?30600 gnd rxd v bb 5 6 4 inh 2 state & wake?up control thermal shutdown v cc 8 1 pc20050113.3 txd 7 v cc comp slope control filter en 3 30 k 10 k 40 k figure 1. block diagram pc20050113.5 amis? 30600 lin gnd rxd txd 2 1 3 4 5 6 78 v cc lin controller vbat in out v cc master node 1 nf 1 k w en gnd 2 5v?reg v bb inh gnd 100 nf amis? 30600 lin gnd rxd txd 2 1 3 4 5 6 78 v cc lin controller vbat in out v cc slave node en gnd 2 5v?reg v bb inh gnd 100 nf kl30 kl31 lin?bus 10 mf 10 mf figure 2. application diagram
amis?30600 http://onsemi.com 3 table 1. pin list and descriptions pin name description 1 rxd receive data output; low in dominant state 2 en enable input; transceiver in normal operation mode when high 3 vcc 5v supply input 4 txd transmit data input; low in dominant state; internal 40 k pullup 5 gnd ground 6 lin lin bus output/input; low in dominant state; internal 30 k pullup 7 vbb battery supply input 8 inh inhibit output; to control a voltage regulator; becomes high when wake?up via lin bus occurs table 2. absolute maximum ratings symbol parameter conditions min max unit v cc supply voltage ?0.3 +7 v v bb battery supply voltage ?0.3 +40 v v lin dc voltage at pin lin 0 < v cc < 5.50 v ?40 +40 v v inh dc voltage at pin inh 0 < v cc < 5.50 v ?0.3 v bb + 0.3 v v txd dc voltage at pin txd 0 < v cc < 5.50 v ?0.3 v cc + 0.3 v v rxd dc voltage at pin rxd 0 < v cc < 5.50 v ?0.3 v cc + 0.3 v v en dc voltage at pin en 0 < v cc < 5.50 v ?0.3 v cc + 0.3 v v esd(lin) electrostatic discharge voltage at lin pin (note 1) ?4 +4 kv v esd electrostatic discharge voltage at all other pins (note 1) ?4 +4 kv v tran(lin) transient voltage at pin lin (note 2) ?150 +150 v v tran(vbb) transient voltage at pin v bb (note 3) ?150 +150 v t amb ambient temperature ?40 +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. standardized human body model system esd pulses in accordance to iec 1000.4.2. 2. applied transient waveforms in accordance with ?iso 7637 parts 1 & 3?, capacitive coupled test pulses 1 (?100 v), 2 (+100 v), 3a (?150 v), and 3b (+150 v). see figure 8. 3. applied transient waveforms in accordance with ?iso 7637 parts 1 & 3?, direct coupled test pulses 1 (?100 v), 2 (+75 v), 3a ( ?150 v), 3b (+150 v), and 5 (+80 v). see figure 8. table 3. operating range symbol parameter min typ max unit v cc supply voltage 4.75 +5.25 v v bb battery supply voltage 7.3 +18 v t j maximum junction temperature ?40 +150 c t jsd thermal shutdown temperature +150 +170 +190 c r thj?a thermal resistance junction?to?ambient 185 c/w
amis?30600 http://onsemi.com 4 application information v cc = on permanently v cc controlled by inh: inh = float v cc = off inh = h v cc = on power up en = h en = l inh = h rx = h en = l wake?up over bus t > t wake v bb = on and v cc = on en = h inh = float rx = h inh = h rx = lin data standby mode normal mode sleep mode power up en = h en = l inh = h v cc = on rx = h en = l wake?up over bus t > t wake inh = float v cc = off rx = float inh = h rx = lin data standby mode normal mode sleep mode v bb = on figure 3. state diagrams the amis?30600 has a slope which depends of the supply v bat . this implementation guarantees biggest slope?time under all load conditions. the rising slope has to be slower then the external rc?time?constant, otherwise the slope will be terminated by the rc?time?constant and no longer by the internal slope?control. this would affect the symmetry of the bus?signal and would limit the maximum allowed bus?speed. a capacitor of 10 f at the supply voltage input vb buffers the input voltage. in combination with the required reverse polarity diode this prevents the device from detecting power down conditions in case of negative transients on the supply line. in order to reduce the current consumption, the amis?30600 offers a sleep operation mode. this mode is selected by switching the enable input en low (see figure 4). an external voltage regulator can be controlled via the inh output in order to minimize the current consumption of the whole application in sleep mode (see figure 2). a wake?up caused by a message on the communication bus automatically enables the voltage regulator by switching the inh output high (see figure 3 ). in case the voltage regulator control input is not connected to the inh output, or the microcontroller is active respectively, the amis?30600 can be set in normal operation mode by en = h (see figure 3).
amis?30600 http://onsemi.com 5 table 4. dc characteristics v cc = 4.75 v to 5.25 v; v bb = 7.3 v to 18 v,v en < v enon , t a = ?40 c to +125 c; r l = 500 unless specified otherwise. all voltages with respect to ground, positive current flowing into pin, unless otherwise specified. symbol parameter conditions min typ max unit supply (pin v cc and pin v bb ) i cc 5 v supply current dominant; v txd = 0 v recessive; v txd = v cc 400 250 700 500 a i bb battery supply current dominant; v txd = 0 v recessive; v txd = v cc 1 100 1.5 200 ma a i bb battery supply current sleep mode; v en = 0 v 35 55 a i cc 5 v supply current sleep mode; v en = 0 v 0.25 1 a transmitter data input (pin txd) v ih high?level input voltage output recessive 0.7 x v cc ? v cc v v il low?level input voltage output dominant 0 ? 0.3 x v cc v r txd,pu pullup resistor to v cc 24 60 k receiver data output (pin rxd) v oh high?level output voltage i rxd = ?10 ma 0.8 x v cc v cc v v ol low?level output voltage i rxd = 5 ma 0 0.2 x v cc v enable input (pin en) v en,on high?level input voltage normal mode 0.7 x v cc ? v cc v v en,off low?level input voltage low power mode 0 ? 0.3 x v cc v r en,pd pulldown resistor?to?gnd 6 10 15 k inhibit output (pin inh) v inh,d high?level voltage drop: v inh,d = v bb ? v inh i inh = ? 0.15 ma 0.5 1.0 v i inh,lk leakage current sleep mode; v inh = 0 v ?5.0 ? 5.0 a bus line (pin lin) v bus,rec recessive bus voltage at pin lin v txd = v cc 0.9 x v bb ? v bb v v bus,dom dominant output voltage at pin lin v txd = 0 v ; v bb = 7.3 v v txd = 0 v; v bb = 18 v; r l = 500 0 ? 1.2 2.0 v i bus,sc bus short?circuit current v bus,short = 18 v 40 85 130 ma i bus,lk bus leakage current v cc = v bb = 0v; v bus = ?8 v v cc = v bb = 0v; v bus = 20 v ?400 ?200 5 20 a r bus bus pullup resistance; note 4 v txd = 0 v 20 30 47 k v bus,rd receiver threshold: recessive?to?dominant 0.4 x v bb 0.48 x v bb 0.6 x v bb v v bus,dr receiver threshold: dominant?to?recessive 0.4 x v bb 0.52 x v bb 0.6 x v bb v v q receiver hysteresis v bus,hys = v bus,rec ? v bus,dom 0.05 x v bb 0.08 x v bb 0.175 x v bb v v wake wake?up threshold voltage 0.4 x v bb 0.6 x v bb v 4. guaranteed by design. the total resistance of the pullup resistor and the serial diode is measured on ate.
amis?30600 http://onsemi.com 6 table 5. ac electrical characteristics according to lin v13 v cc = 4.75 v to 5.25 v; v bb = 7.3 v to 18 v,v en < v enon , t a = ?40 c to +125 c; r l = 500 unless otherwise specified. load for slope definitions (typical loads) = [l1] 1 nf 1 k / [l2] 6.8 nf 600 / [l3] 10 nf 500 . symbol parameter conditions min typ max unit t_slope_f slope time falling edge; (note 5) see figure 5 4 ? 24 s t_slope_r slope time rising edge; (note 5) see figure 5 4 ? 24 s t_slope_sym slope time symmetry; (note 5) t_slope_f ? t_slope_r ?8 ? +8 s t_rec_f propagation delay bus dominant to rxd = low; (note 6) see figures 4 and 5 2 6 s t_rec_r propagation delay bus recessive to rxd = high; (note 6) see figures 4 and 5 6 6 s t wake wake?up delay time 30 100 200 s 5. guaranteed by design; not measured for all supply/load combinations on ate. 6. not measured on ate. table 6. ac electrical characteristics according to lin v2.0 v cc = 4.75 v to 5.25 v; v bb = 7.3 v to 18 v,v en < v enon , t a = ?40 c to +125 c; r l = 500 unless otherwise specified. load for slope definitions (typical loads) = [l1] 1 nf 1 k / [l2] 6.8 nf 600 / [l3] 10 nf 500 . symbol parameter conditions min typ max unit dynamic receiver characteristics according to lin v2.0 trx_pdr propagation delay bus dominant to rxd = low; (note 7) see figure 6 6 s trx_pdf propagation delay bus recessive to rxd = high; (note 7) see figure 6 6 s trx_sym symmetry of receiver propagation delay trx_pdr ? trx_pdf ?2 ? +2 s dynamic transmitter characteristics according to lin v2.0 d1 duty cycle 1 = t bus_rec(min) /(2 x t bit ); see figure 0.396 0.5 d1 duty cycle 1 = t bus_rec(min) /(2 x t bit ); see figure 6 threc(max) = 0.744 x v bat ; thdom(max) = 0.581 x v bat ;v bat = 7.0 v to 18 v; t bit = 50 s threc(max) = 0.744 x v bat ; thdom(max) = 0.581 x v bat ;v bat = 7.0v; t bit = 50 s; t amb = ?40 c 0.366 0.5 d2 duty cycle 2 = t bus_rec(max) /(2 x t bit ); see figure 6 threc(min) = 0.284 x v bat ; thdom(min) = 0.422 x v bat ;v bat = 7.6 v to 18 v; t bit = 50 s; 0.5 0.581 7. not measured on ate.
amis?30600 http://onsemi.com 7 amis ? 30600 v bb gnd 5 7 lin inh 6 3 pd 20080123 .1 en 2 rxd 1 txd 4 100 nf vbat 20 pf 3 +5 v 100 nf r l c l 1nf c l 10 nf 6.8 nf 1k load r l l1 l2 l3 600 500 figure 4. test circuit for timing characteristics pc20041206 .1 t_slope_f t_slope_r lin t 60% 40% 60% 40% pc 20041206.2 lin 50% t rxd t_rec_r t_rec_f t 50% 50% figure 5. timing diagram for ac characteristics according to lin 1.3
amis?30600 http://onsemi.com 8 lin t pd20080319.1 50% t bit t bit 50% t rx _pdr t rx _pdf thresholds receiver 1 thresholds receiver 2 rxd txd ( receiver 2) t t figure 6. timing diagram for ac characteristics according to lin 2.0 th rec(max) th dom(max) th rec(max) th dom(max) t bus_dom(max) t bus_rec(min) t bus_dom(min) t bus_rec(max) amis? 30600 v bb gnd 5 7 lin inh 6 3 pc20050113.2 en 2 rxd 1 txd 4 1 nf 100 nf +13.5 v 20 pf 1 nf transient generator 3 +5.25 v 100 nf 1 k v cc figure 7. test circuit for transient measurements
amis?30600 http://onsemi.com 9 device ordering information part number temperature range package type shipping ? amis30600lini1g ?40 c ? 125 c soic?8 (pb?free) 96 tube / tray amis30600lini1rg ?40 c ? 125 c soic?8 (pb?free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
amis?30600 http://onsemi.com 10 package dimensions soic 8 case 751az issue a
amis?30600 http://onsemi.com 11 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 amis?30600/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative

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